Defocusing image to pattern contact holes using attenuated phase shift masks

The patterning of contact holes by selecting out-of-focus image plane (defocus) using attenuated phase shift masks (APSM) has been studied. Defocus is found to enhance the image modulation at low partial coherence for contact holes with negative local average of mask function. Semi-dense holes up to 130 nm in 8% APSM have been printed by 0.5 μm defocus at a partial coherence of 0.31 using KrF scanner with highest numerical aperture of 0.68. However, these holes were closed with in-focus imaging. Defocus is also found to be beneficial for patterning the pitches that have extensive side lobes with in-focus imaging.     

X射线光刻掩模背面刻蚀过程中的形变仿真

开发了理论模型以验证有限元方法用于X射线光刻掩模刻蚀过程数值仿真的正确性。利用相同的有限元技术，对X射线光刻掩模的背面开窗、Si片刻蚀过程进行数值仿真。结果表明，图形区域的最大平面内形变(IPD)出现在上、下边缘处，最大非平面形变(OPD)出现在左、右边缘处。此外对Si片单载荷步刻蚀和多载荷步刻蚀的仿真进行比较，结果表明图形区域最终的形变量与Si片刻蚀的过程无关。     

数字电视用中分辨率74cm纯平彩色显像管BC配列不良的分析与对策

通过对74cm中分辨率纯平彩色显像管BC配列局部严重群散不良的调查分析,确定荫罩受力塌陷是主要原因,通过改良设计、工艺优化及其它方面的综合对策,使以上技术难题得到满意的解决,整管不良率由4.78%下降到0.172%。     

晶体管的计算机辅助设计

将晶体管设计中繁琐的纵向、横向参数的设计计算以及参数验算,采用Basic人机对话方式,由计算机完成。并用BAsic语言绘制出所需的七块光刻掩膜图。既大大地减轻了设计人员繁琐劳动、缩短了设计时间、提高设计质量,又便于修改。还可广泛用于同种结构的不同动率要求的各种晶体管的设计中。     

Simulation of toxic gases and vapours removal by activated carbon filters

The system ASC carbon filter/cyanogen chloride was studied by simulation. Three filter configurations and several models, taking into account Langmuir adsorption and second-order reaction between the adsorbed toxic vapour and the active metal on the surface, were developed.The effects of axial dispersion, number of reaction units, film mass transfer units and intraparticle mass transfer resistance on the breakthrough time were studied.Simulation results show that a complex model should be used in order to predict with reasonable accuracy the protection imparted by these filters.     

Selective area epitaxy of CdTe

We have performed selective area epitaxy (SAE) of CdTe layers grown by molecular beam epitaxy using a shadow mask technique. This technique was chosen over other SAE techniques due to its simplicity and its compatibility with multiple SAE patterning steps. Features as small as 50 microns × 50 microns were obtained with sharp, abrupt side walls and flat mesa tops. Separations between mesas as small as 20 microns were also obtained. Shadowing effects due to the finite thickness of the mask were reduced by placing the CdTe source in a near normal incidence position. Intimate contact between the mask and the substrate was essential in order to achieve good pattern definition.     

荫罩黑化及DX气与煤气成分的探讨

本文介绍了彩色显像管荫罩黑化反应的机理,详细说明了DX气制气流程,以及DX气的成分对黑化膜品质的影响。计算分析了成分不同的煤气在制成DX气时的成分变化。同时还分析了黑化工艺和黑化设备对煤气成分波动的适应性,及在生产实践中改变DX气制气时的煤气空气对黑化膜质量的影响。     

同步辐射x射线光刻制作深亚微米T形栅

x射线光刻非常适合用于深亚微米T形栅的制作,这是因为它的高分辨率、大的曝光视场和高的生产效率足以满足MMIC制造工艺的要求。本文中我们首先对我们的x射线掩模制造工艺进行介绍,然后论述了一种用于制造深亚微米T形栅的两层胶工艺,介绍了所取得的一些研究结果,最后对国内的深亚微米光刻现状进行了简要分析。     

只读式超分辨光盘的膜层设计和分析

超分辨技术是一种无需减小记录波长或增大数值孔径而提高存储密度的方法。Ge Sb Te是一种良好的相变光存储材料 ,在超分辨光盘中可作为掩膜。利用多层膜反射率的矩阵法计算了掩膜为Ge2 Sb2 Te5薄膜的超分辨只读式光盘的光学参数与各膜层厚度之间的关系 ,最后得到了较为理想的膜层厚度匹配。采用磁控溅射法制备了只读式超分辨光盘 ,测量了光盘的光学性质。     

等离子体横向刻蚀硅的特性研究

研究了用SiO2 +Al作掩模 ,SF6 +O2 混合气体等离子体对Si的横向刻蚀 ,其结果表明 ,在SF6 +O2 等离子体气氛中 ,Al是很好的保护膜 ,可以在待悬浮器件下形成大的开孔。因此 ,预计用这种技术 ,可以在Si片上集成横向尺寸为数百微米 ,具有优良高频性能的MEMSRF/MW无源器件 ,如开关、传输线、电感和电容等。